November 21, 2017 UMD Home NanoCenter AIMLab
Description The STS Deep Reactive ion Etcher uses the Bosch process to cut deep, high aspect ratio channels in silicon. Used primarily for MEMs devices, the only materials permitted in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride. All other materials are prohibited unless approved by FabLab staff.
Location FabLab | ETCH Tunnel
Manufacturer Surface Technology Systems
Staff Contact JonathanJonathan Hummel
jhummel1@umd.edu
301 405-5017
Discussion Link Etching Discussion Page
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Logs
Mon, Nov 13, 2017
7:15 am - 8:45 am
Akshaya Ganesh
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Thu, Nov 09, 2017
9:00 am - 10:00 am
Akshaya Ganesh
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Deleted by: Jonathan Hummel

Tue, Oct 31, 2017
10:00 am - 1:00 pm
Haotian Wang
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Mon, Oct 30, 2017
9:00 am - 10:00 am
Haotian Wang
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Deleted by: Jonathan Hummel

Tue, Oct 24, 2017
8:30 am - 10:30 am
Cameron Harner
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Records to show:
SOPs
Intro to Plasma Etching.pdf (512.1 KB)
etch-08_etch_rate_check.xls (40 KB)
etch-08_etch_rate_history.xls (40 KB)
etch-08_sop_STS_DRIE.pdf (3.62 MB)
index.php (38 B)
Manuals

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index.php (38 B)
Recipes

STS Etching Recipes

Chamber Clean Procedure.doc (26 KB)
DRIEconditioningrecipe.pdf (182.54 KB)
STS reboot.doc (24.5 KB)

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