June 25, 2018 UMD Home NanoCenter AIMLab
Description The STS Deep Reactive ion Etcher uses the Bosch process to cut deep, high aspect ratio channels in silicon. Used primarily for MEMs devices, the only materials permitted in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride. All other materials are prohibited unless approved by FabLab staff.
Location FabLab | ETCH Tunnel
Manufacturer Surface Technology Systems
Staff Contact JonathanJonathan Hummel
301 405-5017
Discussion Link Etching Discussion Page
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Fri, Jun 15, 2018
9:45 am - 11:00 am
Jonathan Hummel
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Wed, May 30, 2018
11:30 am - 3:45 pm
Souheil Nadri
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Deep silicon etch
Thu, May 24, 2018
8:15 am - 9:00 am
Michael Yeh
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Wed, May 23, 2018
11:30 am - 2:00 pm
Michael Yeh
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Wed, May 23, 2018
9:00 am - 11:00 am
Michael Yeh
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Deleted by: Jonathan Hummel

Records to show:
Intro to Plasma Etching.pdf (512.1 KB)
etch-08_etch_rate_check.xls (40 KB)
etch-08_etch_rate_history.xls (40 KB)
etch-08_sop_STS_DRIE.pdf (3.62 MB)
index.php (38 B)

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index.php (38 B)

STS Etching Recipes

Chamber Clean Procedure.doc (26 KB)
DRIEconditioningrecipe.pdf (182.54 KB)
STS reboot.doc (24.5 KB)

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