November 28, 2021 UMD Home NanoCenter AIMLab
Description The STS Deep Reactive ion Etcher uses the Bosch process to cut deep, high aspect ratio channels in silicon. Used primarily for MEMs devices, the only materials permitted in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride. All other materials are prohibited unless approved by FabLab staff.
Location FabLab | ETCH Tunnel
Manufacturer Surface Technology Systems
Staff Contact JonathanJonathan Hummel
301 405-5017
Reservations No upcoming reservations at this time.
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Mon, Nov 22, 2021
12:15 pm - 1:45 pm
Harsimranjit Singh
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Fri, Nov 19, 2021
12:00 pm - 2:00 pm
Harsimranjit Singh
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Fri, Nov 12, 2021
1:00 pm -
Jonathan Hummel
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power outage until Monday 8 am.
Wed, Nov 10, 2021
9:30 am - 11:30 am
Abhay Andar
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Fri, Oct 29, 2021
12:15 pm - 1:15 pm
Kunal Ahuja
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Records to show:
Intro to Plasma Etching.pdf (512.1 KB)
etch-08_etch_rate_check.xls (40 KB)
etch-08_etch_rate_history.xls (40 KB)
etch-08_sop_STS_DRIE.pdf (3.62 MB)
index.php (38 B)

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STS Etching Recipes

Chamber Clean Procedure.doc (26 KB)
DRIEconditioningrecipe.pdf (182.54 KB)
STS reboot.doc (24.5 KB)

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