January 18, 2020 UMD Home NanoCenter AIMLab
Description The STS Deep Reactive ion Etcher uses the Bosch process to cut deep, high aspect ratio channels in silicon. Used primarily for MEMs devices, the only materials permitted in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride. All other materials are prohibited unless approved by FabLab staff.
Location FabLab | ETCH Tunnel
Manufacturer Surface Technology Systems
Staff Contact JonathanJonathan Hummel
301 405-5017
Reservations No upcoming reservations at this time.
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Fri, Dec 13, 2019
3:30 pm - 4:00 pm
Jung Yeon Han
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Deleted by: Jung Yeon Han

Wed, Dec 11, 2019
2:00 pm - 2:30 pm
Sang-Jin Chung
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si etching
Mon, Dec 09, 2019
10:15 am - 10:45 am
Sang-Jin Chung
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photoresist etching
Fri, Dec 06, 2019
2:30 pm - 3:30 pm
Sang-Jin Chung
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Thu, Dec 05, 2019
12:15 pm - 1:15 pm
Sang-Jin Chung
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Records to show:
Intro to Plasma Etching.pdf (512.1 KB)
etch-08_etch_rate_check.xls (40 KB)
etch-08_etch_rate_history.xls (40 KB)
etch-08_sop_STS_DRIE.pdf (3.62 MB)
index.php (38 B)

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STS Etching Recipes

Chamber Clean Procedure.doc (26 KB)
DRIEconditioningrecipe.pdf (182.54 KB)
STS reboot.doc (24.5 KB)

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