August 23, 2019 UMD Home NanoCenter AIMLab
Description The STS Deep Reactive ion Etcher uses the Bosch process to cut deep, high aspect ratio channels in silicon. Used primarily for MEMs devices, the only materials permitted in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride. All other materials are prohibited unless approved by FabLab staff.
Location FabLab | ETCH Tunnel
Manufacturer Surface Technology Systems
Staff Contact JonathanJonathan Hummel
301 405-5017
Reservations No upcoming reservations at this time.
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Tue, Jul 30, 2019
9:30 am - 10:45 am
Jung Yeon Han
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Mon, Jul 29, 2019
6:30 pm - 7:30 pm
Jung Yeon Han
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Mon, Jul 29, 2019
4:30 pm - 5:00 pm
Jung Yeon Han
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Wed, Jul 17, 2019
10:00 am - 11:00 am
Jonathan Hummel
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rate check
Mon, Jul 08, 2019
10:15 pm - 10:45 pm
Jung Yeon Han
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Records to show:
Intro to Plasma Etching.pdf (512.1 KB)
etch-08_etch_rate_check.xls (40 KB)
etch-08_etch_rate_history.xls (40 KB)
etch-08_sop_STS_DRIE.pdf (3.62 MB)
index.php (38 B)

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STS Etching Recipes

Chamber Clean Procedure.doc (26 KB)
DRIEconditioningrecipe.pdf (182.54 KB)
STS reboot.doc (24.5 KB)

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