April 22, 2021 UMD Home FabLab AIMLab
Ian Appelbaum Professor
Physics
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Email: appeli@umd.edu
Phone: 301-405-0890
Office: 1368 John S. Toll Physics Building
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Ian Appelbaum
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Phosphorene: 2-D material ripples, giving optical properties
Complete examination of optical and spin properties of 'graphene's cousin'  More »

 

1 article(s) found.

 

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Publication List
  • 1. Tunnel conductance spectroscopy via harmonic generation in a hybrid capacitor device
    Ian Appelbaum
    Applied Physics Letters, 2013-09, 103 (12), pp.122604
    doi: 10.1063/1.4821748
  • 2. Magnetocurrent of ballistically injected electrons in insulating silicon
    Hyuk-Jae Jang, Ian Appelbaum
    Applied Physics Letters, 2010-11, 97 (18), pp.182108
    doi: 10.1063/1.3511681
  • 3. Reverse Schottky-asymmetry spin current detectors
    Yuan Lu, Ian Appelbaum
    Applied Physics Letters, 2010-10, 97 (16), pp.162501
    doi: 10.1063/1.3504659
  • 4. Spin-Polarized Transient Electron Trapping in Phosphorus-Doped Silicon
    Yuan Lu, Jing Li, Ian Appelbaum
    Physical Review Letters, 2011-01, 106 (21), pp.
    doi: 10.1103/PhysRevLett.106.217202
  • 5. Modeling spin transport in electrostatically-gated lateral-channel silicon devices: Role of interfacial spin relaxation
    Jing Li, Ian Appelbaum
    Physical Review B, 2011-08, 84 (16), pp.
    doi: 10.1103/PhysRevB.84.165318
  • 6. Lateral spin transport through bulk silicon
    Jing Li, Ian Appelbaum
    Applied Physics Letters, 2012-04, 100 (16), pp.162408
    doi: 10.1063/1.4704802
  • 7. Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3
    C. Ojeda-Aristizabal, M. S. Fuhrer, N. P. Butch, J. Paglione, I. Appelbaum
    Applied Physics Letters, 2012-07, 101 (2), pp.023102
    doi: 10.1063/1.4733388
  • 8. Field-Induced Negative Differential Spin Lifetime in Silicon
    Jing Li, Lan Qing, Hanan Dery, Ian Appelbaum
    Physical Review Letters, 2012-04, 108 (15), pp.
    doi: 10.1103/PhysRevLett.108.157201
  • 9. Defect passivation by proton irradiation in ferromagnet-oxide-silicon junctions
    Holly N. Tinkey, Hanan Dery, Ian Appelbaum
    Applied Physics Letters, 2016-10, 109 (14), pp.142407
    doi: 10.1063/1.4964344
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