December 9, 2018 UMD Home FabLab AIMLab
Description The STS Deep Reactive ion Etcher uses the Bosch process to cut deep, high aspect ratio channels in silicon. Used primarily for MEMs devices, the only materials permitted in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride. All other materials are prohibited unless approved by FabLab staff.
Location FabLab | ETCH Tunnel
Manufacturer Surface Technology Systems
Staff Contact JonathanJonathan Hummel
301 405-5017
External Non-profit / University
Small Commercial / MTECH
Large Commercial
Reservations No upcoming reservations at this time.
Thu, Dec 06, 2018
12:30 pm - 1:30 pm
Pranav Menon
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Mon, Nov 26, 2018
8:30 pm - 9:00 pm
Jung Yeon Han
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Mon, Nov 26, 2018
11:30 am - 11:45 am
Jung Yeon Han
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Sun, Nov 25, 2018
11:15 pm - 11:45 pm
Jung Yeon Han
View Reservation
Sun, Nov 25, 2018
9:30 pm - 10:00 pm
Jung Yeon Han
View Reservation
Records to show:
Intro to Plasma Etching.pdf (512.1 KB)
etch-08_etch_rate_check.xls (40 KB)
etch-08_etch_rate_history.xls (40 KB)
etch-08_sop_STS_DRIE.pdf (3.62 MB)
index.php (38 B)

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STS Etching Recipes

Chamber Clean Procedure.doc (26 KB)
DRIEconditioningrecipe.pdf (182.54 KB)
STS reboot.doc (24.5 KB)

Colleges A. James Clark School of Engineering
The College of Computer, Mathematical, and Natural Sciences

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